Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 53-56
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非掺半绝缘磷化铟晶片的制备及其均匀性

董宏伟 , 赵有文 , 焦景华 , 赵建群 and 林兰英

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Key words: 磷化铟(InP), 非掺, 半绝缘, 均匀性, 霍耳(Hall), PL-Mapping

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 53-56
      董宏伟, 赵有文, 焦景华, 赵建群, 林兰英. 非掺半绝缘磷化铟晶片的制备及其均匀性[J]. 半导体学报(英文版), 2002, 23(1): 53-56.
      Citation:
      董宏伟, 赵有文, 焦景华, 赵建群, 林兰英. 非掺半绝缘磷化铟晶片的制备及其均匀性[J]. 半导体学报(英文版), 2002, 23(1): 53-56.
      shu

      • Received Date: 2015-08-19

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