Chin. J. Semicond. > 2004, Volume 25 > Issue 2 > 138-142
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基于共振隧穿二极管的TSRAM设计(英文)

程玥 , 潘立阳 and 许军

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Key words: 共振隧穿二极管,隧穿静态随机存储器,高速,低功耗

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(2): 138-142
      程玥, 潘立阳, 许军. 基于共振隧穿二极管的TSRAM设计(英文)[J]. 半导体学报(英文版), 2004, 25(2): 138-142.
      Citation:
      程玥, 潘立阳, 许军. 基于共振隧穿二极管的TSRAM设计(英文)[J]. 半导体学报(英文版), 2004, 25(2): 138-142.
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      • Received Date: 2015-08-19

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