Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 337-341

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硅上后热氧化钛膜制备氧化钛及其电学特性(英文)

朱晖文 , 赵柏儒 , 刘晓彦 , 康晋锋 and 韩汝琦

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Key words: 高k材料, 热氧化, 直流磁控溅射

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 337-341
      朱晖文, 赵柏儒, 刘晓彦, 康晋锋, 韩汝琦. 硅上后热氧化钛膜制备氧化钛及其电学特性(英文)[J]. 半导体学报(英文版), 2002, 23(4): 337-341.
      Citation:
      朱晖文, 赵柏儒, 刘晓彦, 康晋锋, 韩汝琦. 硅上后热氧化钛膜制备氧化钛及其电学特性(英文)[J]. 半导体学报(英文版), 2002, 23(4): 337-341.
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      • Received Date: 2015-08-19

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