Chin. J. Semicond. > 1996, Volume 17 > Issue 11 > 873-876
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由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器

康学军，林世鸣，高俊华，高洪海，王启明，王红杰，王立轩，张春晖

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    Received: 18 August 2015 Revised: Online: Published: 01 November 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(11): 873-876
      康学军，林世鸣，高俊华，高洪海，王启明，王红杰，王立轩，张春晖. 由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器[J]. 半导体学报(英文版), 1996, 17(11): 873-876.
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      康学军，林世鸣，高俊华，高洪海，王启明，王红杰，王立轩，张春晖. 由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器[J]. 半导体学报(英文版), 1996, 17(11): 873-876.
      shu

      • Received Date: 2015-08-18

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