Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 149-153

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Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC

Han Ru, Yang Yintang, Wang Ping, Cui Zhandong and Li Liang

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Abstract: An investigation of Au/Ti/Ni and Au/Ti/Pt ohmic contacts to n-type 4H-SiC and the behavior of metal films on SiC with thermal anneals is reported.Specific contact resistance as low as 2.765e-6Ω· cm2 was achieved after rapid thermal annealing in N2 for 2min at 950℃.SIMS analysis shows that the formation of Ni silicide after annealing supported a number of carbon atoms’ outdiffusion from the SiC to form interstitial compound TiC.This process can create abundant C vacancies near the interface.It is the carbon defect layer that enhances the defect-assisted tunneling.The interface band structure within the defect level could make it clear why the metal-SiC contacts become ohmic during annealing.

Key words: silicon carbideohmic contactcarbon vacancyinterface band structure

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    Received: 18 August 2015 Revised: 03 October 2006 Online: Published: 01 February 2007

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      Han Ru, Yang Yintang, Wang Ping, Cui Zhandong, Li Liang. Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC[J]. Journal of Semiconductors, 2007, 28(2): 149-153. ****Han R, Yang Y T, Wang P, Cui Z and o N, Li L. Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC[J]. Chin. J. Semicond., 2007, 28(2): 149.
      Citation:
      Han Ru, Yang Yintang, Wang Ping, Cui Zhandong, Li Liang. Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC[J]. Journal of Semiconductors, 2007, 28(2): 149-153. ****
      Han R, Yang Y T, Wang P, Cui Z and o N, Li L. Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC[J]. Chin. J. Semicond., 2007, 28(2): 149.

      Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-31
      • Revised Date: 2006-10-03
      • Published Date: 2007-01-30

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