Chin. J. Semicond. > 1992, Volume 13 > Issue 5 > 293-301
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关于薄SiO_2的高场弛豫电导与击穿机制的研究

许铭真 , 谭长华 and 王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(5): 293-301
      许铭真, 谭长华, 王阳元. 关于薄SiO_2的高场弛豫电导与击穿机制的研究[J]. 半导体学报(英文版), 1992, 13(5): 293-301.
      Citation:
      许铭真, 谭长华, 王阳元. 关于薄SiO_2的高场弛豫电导与击穿机制的研究[J]. 半导体学报(英文版), 1992, 13(5): 293-301.
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      • Received Date: 2015-08-19

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