Chin. J. Semicond. > 1995, Volume 16 > Issue 7 > 481-486

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具有直接带隙的［001］Si_m／Ge_n应变超晶格

马秋鸣，王康隆，罗晋生

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(7): 481-486
      马秋鸣，王康隆，罗晋生. 具有直接带隙的［001］Si_m／Ge_n应变超晶格[J]. 半导体学报(英文版), 1995, 16(7): 481-486.
      Citation:
      马秋鸣，王康隆，罗晋生. 具有直接带隙的［001］Si_m／Ge_n应变超晶格[J]. 半导体学报(英文版), 1995, 16(7): 481-486.
      shu

      • Received Date: 2015-08-19

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