Chin. J. Semicond. > 1995, Volume 16 > Issue 11 > 857-861
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双固相外延技术及高性能1μmCMOS／SOS器件的研究

张兴，石涌泉，路泉，黄敞

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(11): 857-861
      张兴，石涌泉，路泉，黄敞. 双固相外延技术及高性能1μmCMOS／SOS器件的研究[J]. 半导体学报(英文版), 1995, 16(11): 857-861.
      Citation:
      张兴，石涌泉，路泉，黄敞. 双固相外延技术及高性能1μmCMOS／SOS器件的研究[J]. 半导体学报(英文版), 1995, 16(11): 857-861.
      shu

      • Received Date: 2015-08-19

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