Chin. J. Semicond. > 1989, Volume 10 > Issue 4 > 286-293
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集成电路中多晶硅薄膜载流子迁移率的实验研究和理论模型

王阳元 , 陶江 , 韩汝琦 , 吉利久 and 张爱珍

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(4): 286-293
      王阳元, 陶江, 韩汝琦, 吉利久, 张爱珍. 集成电路中多晶硅薄膜载流子迁移率的实验研究和理论模型[J]. 半导体学报(英文版), 1989, 10(4): 286-293.
      Citation:
      王阳元, 陶江, 韩汝琦, 吉利久, 张爱珍. 集成电路中多晶硅薄膜载流子迁移率的实验研究和理论模型[J]. 半导体学报(英文版), 1989, 10(4): 286-293.
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      • Received Date: 2015-08-19

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