Chin. J. Semicond. > 1985, Volume 6 > Issue 1 > 82-85
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正弦平方势及退道过程的半经典描述

罗诗裕 , 刘曾荣 and 邵明珠

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    张小玲, 吕长治, 谢雪松, 李志国, 曹春海, 李拂晓, 陈堂胜, 陈效建. AlGaN/GaN HEMT器件的研制[J]. 半导体学报(英文版), 2003, 24(8): 847-849.
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    Received: 20 August 2015 Revised: Online: Published: 01 January 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(1): 82-85
      张小玲, 吕长治, 谢雪松, 李志国, 曹春海, 李拂晓, 陈堂胜, 陈效建. AlGaN/GaN HEMT器件的研制[J]. 半导体学报(英文版), 2003, 24(8): 847-849.
      Citation:
      罗诗裕, 刘曾荣, 邵明珠. 正弦平方势及退道过程的半经典描述[J]. 半导体学报(英文版), 1985, 6(1): 82-85.
      shu

      • Received Date: 2015-08-20

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