Chin. J. Semicond. > 2003, Volume 24 > Issue 10 > 1115-1120

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半导体物理研究新进展

孙连亮 , 李树深 , 张荣 and 何杰

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Key words: 半导体物理, 国际会议, 量子纳米结构

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(10): 1115-1120
      孙连亮, 李树深, 张荣, 何杰. 半导体物理研究新进展[J]. 半导体学报(英文版), 2003, 24(10): 1115-1120.
      Citation:
      孙连亮, 李树深, 张荣, 何杰. 半导体物理研究新进展[J]. 半导体学报(英文版), 2003, 24(10): 1115-1120.
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      • Received Date: 2015-08-20

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