Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1507-1415
|

CONTENTS

C掺杂对离子注入合成β- FeSi_2 薄膜的影响

李晓娜 , 聂冬 , 董闯 , 徐雷 and 张泽

+ Author Affiliations

PDF

Key words: β-FeSi2, 半导体薄膜, 金属硅化物, 离子注入, 透射电子显微镜

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2162 Times PDF downloads: 671 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1507-1415
      李晓娜, 聂冬, 董闯, 徐雷, 张泽. C掺杂对离子注入合成β- FeSi_2 薄膜的影响[J]. 半导体学报(英文版), 2001, 22(12): 1507-1415.
      Citation:
      李晓娜, 聂冬, 董闯, 徐雷, 张泽. C掺杂对离子注入合成β- FeSi_2 薄膜的影响[J]. 半导体学报(英文版), 2001, 22(12): 1507-1415.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return