Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 74-77
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不同工艺超薄栅氧化层的抗击穿特性

韩德栋 , 张国强 , 任迪远 , 陆妩 and 严荣良

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Key words: 不同工艺, 超薄栅氧化层, 抗击穿特性

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 74-77
      韩德栋, 张国强, 任迪远, 陆妩, 严荣良. 不同工艺超薄栅氧化层的抗击穿特性[J]. 半导体学报(英文版), 2002, 23(1): 74-77.
      Citation:
      韩德栋, 张国强, 任迪远, 陆妩, 严荣良. 不同工艺超薄栅氧化层的抗击穿特性[J]. 半导体学报(英文版), 2002, 23(1): 74-77.
      shu

      • Received Date: 2015-08-19

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