Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 41-43
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Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio

Zhang Yang, Zeng Yiping, Ma Long, Wang Baoqiang, Zhu Zhanping, Wang Liangchen and Yang Fuhua

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Abstract: We report InAs/In0.53Ca0.47As/AlAs resonant tunneling diodes(RTDs)grown on InP substrate by molecular beam epitaxy.The peak to valley current ratio of these devices is 19 at 300K.A peak current density of 3kA/crn2 is obtained for RTDs with AlAs barriers of ten monolayers and anIn0.53Ca0.47As well of eight monolayer with a four-monolayer InAs insert layer.

Key words: resonant tunneling diode, InP substrate, molecular beam epitaxy

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 41-43
      Zhang Yang, Zeng Yiping, Ma Long, Wang Baoqiang, Zhu Zhanping, Wang Liangchen, Yang Fuhua. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Journal of Semiconductors, 2007, 28(S1): 41-43. ****Zhang Y, Zeng Y P, Ma L, Wang B Q, Zhu Z P, Wang L C, Yang F H. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Chin. J. Semicond., 2007, 28(S1): 41.
      Citation:
      Zhang Yang, Zeng Yiping, Ma Long, Wang Baoqiang, Zhu Zhanping, Wang Liangchen, Yang Fuhua. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Journal of Semiconductors, 2007, 28(S1): 41-43. ****
      Zhang Y, Zeng Y P, Ma L, Wang B Q, Zhu Z P, Wang L C, Yang F H. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Chin. J. Semicond., 2007, 28(S1): 41.
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      Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio

      • Materials Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Materials Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China and Materials Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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