Chin. J. Semicond. > 1995, Volume 16 > Issue 5 > 371-375
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高纯GaAs的非线性伏安特性

陈忠辉，刘普霖，史国良，陆卫，沈学础

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(5): 371-375
      陈忠辉，刘普霖，史国良，陆卫，沈学础. 高纯GaAs的非线性伏安特性[J]. 半导体学报(英文版), 1995, 16(5): 371-375.
      Citation:
      陈忠辉，刘普霖，史国良，陆卫，沈学础. 高纯GaAs的非线性伏安特性[J]. 半导体学报(英文版), 1995, 16(5): 371-375.
      shu

      • Received Date: 2015-08-19

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