| Citation: |
Luo Xiaorong, Zhang Bo, Li Zhaoji, Tang Xinwei. A Novel SOI High Voltage Device Structure with a Partial Locating Charge Trench[J]. Journal of Semiconductors, 2006, 27(1): 115-120.
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Luo X R, Zhang B, Li Z J, Tang X W. A Novel SOI High Voltage Device Structure with a Partial Locating Charge Trench[J]. Chin. J. Semicond., 2006, 27(1): 115.
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A Novel SOI High Voltage Device Structure with a Partial Locating Charge Trench
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Abstract
A novel high voltage device structure--partial locating charge trench SOI (PTSOI) is proposed.Interface charges changing with the drain voltage are introduced in the trench.The charges make the vertical electric field of the buried oxide increase from about 3ESi, C to the critical breakdown electric field of SiO2.In addition,the depletion layer spreads into the substrate through the silicon window.Hence the breakdown voltage is enhanced.The self-heating effect of SOI devices is alleviated as a result of the silicon window.The breakdown characteristics and thermal characteristics are researched by a 2D device simulator.A breakdown voltage greater than 700V can be obtained for the PTSOI device with a 2μm thick Si layer and 1μm buried oxide.The maximum temperature of the PTSOI device is 6K and 25K lower than that of TSOIs with 1μm and 3μm thick buried oxides,respectively -
References
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Proportional views
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