Chin. J. Semicond. > 2003, Volume 24 > Issue 8 > 847-849
|

CONTENTS

AlGaN/GaN HEMT器件的研制

张小玲 , 吕长治 , 谢雪松 , 李志国 , 曹春海 , 李拂晓 , 陈堂胜 and 陈效建

+ Author Affiliations

PDF

Key words: AlGaN/GaN, HEMT, 输出特性

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2735 Times PDF downloads: 1445 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 August 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(8): 847-849
      张小玲, 吕长治, 谢雪松, 李志国, 曹春海, 李拂晓, 陈堂胜, 陈效建. AlGaN/GaN HEMT器件的研制[J]. 半导体学报(英文版), 2003, 24(8): 847-849.
      Citation:
      张小玲, 吕长治, 谢雪松, 李志国, 曹春海, 李拂晓, 陈堂胜, 陈效建. AlGaN/GaN HEMT器件的研制[J]. 半导体学报(英文版), 2003, 24(8): 847-849.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return