Chin. J. Semicond. > 2003, Volume 24 > Issue 8 > 847-849
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AlGaN/GaN HEMT器件的研制

张小玲 , 吕长治 , 谢雪松 , 李志国 , 曹春海 , 李拂晓 , 陈堂胜 and 陈效建

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Key words: AlGaN/GaN, HEMT, 输出特性

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(8): 847-849
      张小玲, 吕长治, 谢雪松, 李志国, 曹春海, 李拂晓, 陈堂胜, 陈效建. AlGaN/GaN HEMT器件的研制[J]. 半导体学报(英文版), 2003, 24(8): 847-849.
      Citation:
      张小玲, 吕长治, 谢雪松, 李志国, 曹春海, 李拂晓, 陈堂胜, 陈效建. AlGaN/GaN HEMT器件的研制[J]. 半导体学报(英文版), 2003, 24(8): 847-849.
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      • Received Date: 2015-08-20

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