Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1211-1216
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基于制作离散性对策的高性能CMOS DAC

于雪峰 and 石寅

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Key words: D/A转换器, CMOS混合集成电路, 制作工艺离散性, 中心对称, Skill语言

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(11): 1211-1216
      于雪峰, 石寅. 基于制作离散性对策的高性能CMOS DAC[J]. 半导体学报(英文版), 2003, 24(11): 1211-1216.
      Citation:
      于雪峰, 石寅. 基于制作离散性对策的高性能CMOS DAC[J]. 半导体学报(英文版), 2003, 24(11): 1211-1216.
      shu

      • Received Date: 2015-08-20

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