Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 717-722

Photonic A N D Gate Based on Hybrid Integration of Ga As V C S E L and Ga As M I S S

Kang Xuejun , Lin Shiming , Liao Qiwei , Gao Junhua , Cheng Peng , Liu Shi'an and Wang Qiming

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Received: 20 August 2015 Revised: Online: Published: 01 August 1999

Article Navigation > Journal of Semiconductors > 1999 > 20(8): 717-722

Kang Xuejun, Lin Shiming, Liao Qiwei, Gao Junhua, Cheng Peng, Liu Shi'an, Wang Qiming. Photonic A N D Gate Based on Hybrid Integration of Ga As V C S E L and Ga As M I S S[J]. 半导体学报(英文版), 1999, 20(8): 717-722.

Citation:

Kang Xuejun, Lin Shiming, Liao Qiwei, Gao Junhua, Cheng Peng, Liu Shi'an, Wang Qiming. Photonic A N D Gate Based on Hybrid Integration of Ga As V C S E L and Ga As M I S S[J]. 半导体学报(英文版), 1999, 20(8): 717-722.

Kang Xuejun, Lin Shiming, Liao Qiwei, Gao Junhua, Cheng Peng, Liu Shi'an, Wang Qiming. Photonic A N D Gate Based on Hybrid Integration of Ga As V C S E L and Ga As M I S S[J]. 半导体学报(英文版), 1999, 20(8): 717-722.

Citation:

Kang Xuejun, Lin Shiming, Liao Qiwei, Gao Junhua, Cheng Peng, Liu Shi'an, Wang Qiming. Photonic A N D Gate Based on Hybrid Integration of Ga As V C S E L and Ga As M I S S[J]. 半导体学报(英文版), 1999, 20(8): 717-722.

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