| Citation: |
Wang Wei, Niu Pingjuan, Guo Weilian, Yu Xin, Zhang Shilin. A Novel Oscillator Based on RTD/MOSFET[J]. Journal of Semiconductors, 2007, 28(2): 289-293.
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Wang W, Niu P J, Guo W L, Yu X, Zhang S L. A Novel Oscillator Based on RTD/MOSFET[J]. Chin. J. Semicond., 2007, 28(2): 289.
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A Novel Oscillator Based on RTD/MOSFET
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Abstract
Based on a novel oscillating mechanism,a 25MHz high-frequency oscillating circuit is achieved by combining resonant tunneling diode (RTD) characterized by intrinsic negative differential resistance (NDR) and bi-stability with a MOSFET.The mechanism of this oscillating circuit is analyzed theoretically,and the correctness of the circuit analysis is verified by advanced design system (ADS) simulation and experiment.The realization of this circuit can solve the problem of power limitation in conventional RTD-based oscillating circuits.If using a high-frequency,high-speed device such as a high electron mobility transistor (HEMT) in stead of a MOSFET,this circuit can improve its frequency greatly and is more suitable for monolithic integration.Thus it can find wide applications in radio-frequency and microwave fields.-
Keywords:
- RTD/MOSFET element,
- oscillator,
- ADS circuit simulation
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References
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Proportional views
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