Chin. J. Semicond. > 1996, Volume 17 > Issue 3 > 223-226
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SOI上PZT铁电薄膜的脉冲准分子激光沉积及其快速退火研究

郑立荣，陈逸清，张顺开，林成鲁，邹世昌

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    Received: 18 August 2015 Revised: Online: Published: 01 March 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(3): 223-226
      郑立荣，陈逸清，张顺开，林成鲁，邹世昌. SOI上PZT铁电薄膜的脉冲准分子激光沉积及其快速退火研究[J]. 半导体学报(英文版), 1996, 17(3): 223-226.
      Citation:
      郑立荣，陈逸清，张顺开，林成鲁，邹世昌. SOI上PZT铁电薄膜的脉冲准分子激光沉积及其快速退火研究[J]. 半导体学报(英文版), 1996, 17(3): 223-226.
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      • Received Date: 2015-08-18

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