Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped p-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells

Ye Zhizhen; Lin Shisheng; He Haiping; Gu Xiuquan; Chen Lingxiang; Lü Jianguo; Huang Jingyun; Zhu Liping; Wang Lei; Zhang Yinzhu; Li Xianhang

Article Navigation > Journal of Semiconductors > 2008 > 29(8): 1433-1435

Ye Zhizhen, Lin Shisheng, He Haiping, Gu Xiuquan, Chen Lingxiang, Lü Jianguo, Huang Jingyun, Zhu Liping, Wang Lei, Zhang Yinzhu, Li Xianhang. Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped p-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells[J]. Journal of Semiconductors, 2008, 29(8): 1433-1435. ****Ye Z Z, Lin S S, He H P, Gu X Q, Chen L X, Lü J, Huang J Y, Zhu L P, Wang L, Zhang Y Z, Li X H. Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped p-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells[J]. J. Semicond., 2008, 29(8): 1433.

Citation:

Ye Z Z, Lin S S, He H P, Gu X Q, Chen L X, Lü J, Huang J Y, Zhu L P, Wang L, Zhang Y Z, Li X H. Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped p-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells[J]. J. Semicond., 2008, 29(8): 1433.

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Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped p-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Received Date: 2015-08-18
Accepted Date: 2008-07-21
Revised Date: 2008-07-21
Published Date: 2008-08-02

Abstract

Abstract

Using ZnO/Zn0.9Mg0.1O multi-quantum wells as active layer and Na as acceptor dopant of ZnO, we fabricate ZnO light-emitting diode (LED) on silicon substrate. We observe strong blue-violet emission and negligible defect emission from this device under low current injection at room temperature. This work could have significant impact on the practical application of ZnO LED.
- LED,
- Na doped,
- p-type ZnO,
- multi-quantum wells

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