| Citation: |
Yin Zhijun, Zhong Fei, Qiu Kai, Li Xinhua, Wang Yuqi. Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2007, 28(6): 909-912.
****
Yin Z J, Zhong F, Qiu K, Li X H, Wang Y Q. Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy[J]. Chin. J. Semicond., 2007, 28(6): 909.
|
Growth of Thick GaN Films on Mixed-Polarity Buffer by Halide Vapor Phase Epitaxy
-
Abstract
GaN thin films with mixed-polarity were initially grown on (0001) sapphire substrates by molecular beam epitaxy (MBE).The samples were etched by alkali solution,and porous GaN films were formed.GaN thick films were grown on the porous GaN layers by hydride vapor phase epitaxy (HVPE).These HVPE-GaN epilayers were characterized by atomic force microscopy,X-ray diffraction,and photoluminescence spectroscopy.The results indicate that the crystalline quality of HVPE-GaN is improved by using the porous GaN buffer,as the stress is reduced markedly.-
Keywords:
- GaN,
- mixed-polar,
- porous,
- stress relaxation
-
References
-
Proportional views
DownLoad: