Chin. J. Semicond. > 2000, Volume 21 > Issue 6 > 608-613
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具有TiN扩散阻挡层的n-GaAs欧姆接触的可靠性

张万荣 , 李志国 , 穆甫臣 , 程尧海 , 孙英华 , 郭伟玲 , 陈建新 , 沈光地 , 张玉清 and 张慕义

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Key words: 欧姆接触, 可靠性, 阻挡层

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(6): 608-613
      张万荣, 李志国, 穆甫臣, 程尧海, 孙英华, 郭伟玲, 陈建新, 沈光地, 张玉清, 张慕义. 具有TiN扩散阻挡层的n-GaAs欧姆接触的可靠性[J]. 半导体学报(英文版), 2000, 21(6): 608-613.
      Citation:
      张万荣, 李志国, 穆甫臣, 程尧海, 孙英华, 郭伟玲, 陈建新, 沈光地, 张玉清, 张慕义. 具有TiN扩散阻挡层的n-GaAs欧姆接触的可靠性[J]. 半导体学报(英文版), 2000, 21(6): 608-613.
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      • Received Date: 2015-08-20

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