Chin. J. Semicond. > 1999, Volume 20 > Issue 3 > 237-241
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表面光电压测量P型硅抛光片少子扩散长度及铁杂质含量的研究

屠海令 , 朱悟新 , 王敬 , 周旗钢 , 张椿 and 孙燕

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(3): 237-241
      屠海令, 朱悟新, 王敬, 周旗钢, 张椿, 孙燕. 表面光电压测量P型硅抛光片少子扩散长度及铁杂质含量的研究[J]. 半导体学报(英文版), 1999, 20(3): 237-241.
      Citation:
      屠海令, 朱悟新, 王敬, 周旗钢, 张椿, 孙燕. 表面光电压测量P型硅抛光片少子扩散长度及铁杂质含量的研究[J]. 半导体学报(英文版), 1999, 20(3): 237-241.
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      • Received Date: 2015-08-20

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