Chin. J. Semicond. > 1984, Volume 5 > Issue 1 > 99-102
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非共晶Au/Ge欧姆接触工艺改善扩散法n沟道GaAs MESFET

吴鼎芬 , H.Daembkes and K.Heime

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(1): 99-102
      吴鼎芬, H.Daembkes, K.Heime. 非共晶Au/Ge欧姆接触工艺改善扩散法n沟道GaAs MESFET[J]. 半导体学报(英文版), 1984, 5(1): 99-102.
      Citation:
      吴鼎芬, H.Daembkes, K.Heime. 非共晶Au/Ge欧姆接触工艺改善扩散法n沟道GaAs MESFET[J]. 半导体学报(英文版), 1984, 5(1): 99-102.
      shu

      • Received Date: 2015-08-20

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