Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 300-305

Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport

Zhang Xin'an, Zhang Jingwen, Wang Dong and Bi Zhen

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Abstract: Sufficient high component supersaturation vapor pressure is obtained by making use of transport agent around 1000"C in the process of ZnO single crystal growth via chemical vapor transport(CVT).This makes strong driving force of the growth realized.Control of nucleation and growth mode is a key factor to obtain large size ZnOsingle crystal. CVT ZnO single crystal surface morphology and growth phenomenon are studied in this paper.Dependence of growth mode on growth temperature,stoichiometry has been demonstrated. Two-dimension nucleation growth mode and large size ZnO single crystal with uniform thickness have been obtained.

Key words: zinc oxidechemical vapor transportgrowth mode

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen. Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport[J]. Journal of Semiconductors, 2007, 28(S1): 300-305. ****Zhang X, Zhang J W, Wang D, Bi Z. Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport[J]. Chin. J. Semicond., 2007, 28(S1): 300.
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      Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen. Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport[J]. Journal of Semiconductors, 2007, 28(S1): 300-305. ****
      Zhang X, Zhang J W, Wang D, Bi Z. Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport[J]. Chin. J. Semicond., 2007, 28(S1): 300.

      Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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