Chin. J. Semicond. > 2003, Volume 24 > Issue 7 > 780-784

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不同注F剂量与CMOS运放电路辐照损伤的相关性

任迪远 , 陆妩 , 余学锋 , 郭旗 , 张国强 , 胡浴红 , 王明刚 and 赵文魁

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Key words: 注FCMOS运算放大器, 电离辐照, 跨导

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(7): 780-784
      任迪远, 陆妩, 余学锋, 郭旗, 张国强, 胡浴红, 王明刚, 赵文魁. 不同注F剂量与CMOS运放电路辐照损伤的相关性[J]. 半导体学报(英文版), 2003, 24(7): 780-784.
      Citation:
      任迪远, 陆妩, 余学锋, 郭旗, 张国强, 胡浴红, 王明刚, 赵文魁. 不同注F剂量与CMOS运放电路辐照损伤的相关性[J]. 半导体学报(英文版), 2003, 24(7): 780-784.
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      • Received Date: 2015-08-20

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