Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 612-616
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超薄W-Si-N作为铜与硅之间的扩散阻挡层

陆华 , 屈新萍 , 王光伟 , 茹国平 and 李炳宗

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Key words: W-Si-N, 扩散阻挡层, 热稳定性, 铜互连

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 612-616
      陆华, 屈新萍, 王光伟, 茹国平, 李炳宗. 超薄W-Si-N作为铜与硅之间的扩散阻挡层[J]. 半导体学报(英文版), 2003, 24(6): 612-616.
      Citation:
      陆华, 屈新萍, 王光伟, 茹国平, 李炳宗. 超薄W-Si-N作为铜与硅之间的扩散阻挡层[J]. 半导体学报(英文版), 2003, 24(6): 612-616.
      shu

      • Received Date: 2015-08-20

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