Chin. J. Semicond. > 2003, Volume 24 > Issue 4 > 445-448

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超低亚表面损伤层GaAs抛光晶片的工艺

卜俊鹏 , 郑红军 , 赵冀 , 朱蓉辉 and 尹玉华

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Key words: GaAs, 抛光, 亚表面损伤层

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(4): 445-448
      卜俊鹏, 郑红军, 赵冀, 朱蓉辉, 尹玉华. 超低亚表面损伤层GaAs抛光晶片的工艺[J]. 半导体学报(英文版), 2003, 24(4): 445-448.
      Citation:
      卜俊鹏, 郑红军, 赵冀, 朱蓉辉, 尹玉华. 超低亚表面损伤层GaAs抛光晶片的工艺[J]. 半导体学报(英文版), 2003, 24(4): 445-448.
      shu

      • Received Date: 2015-08-20

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