Growth of SiGe by D-UHV/CVD at Low Temperature

Zeng Yugang; Han Genquan; Yu Jinzhong

J. Semicond. > 2008, Volume 29 > Issue 10 > 1889-1892

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Growth of SiGe by D-UHV/CVD at Low Temperature

Zeng Yugang, Han Genquan and Yu Jinzhong

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Abstract: The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD.In conventional conditions,the lowest temperature for SiGe growth is about 550℃.Generally,the pressure of the growth chamber is about 1E-5Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas.We have succeeded in depositing SiGe films at much lower temperature using a novel method.It is about 1E-2Pa without liquid nitrogen,about 3 magnitudes higher than the traditional method,leading to much faster deposition rate.Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃.The DCXRD curves and TEM image show that the quality of the film is good.The experiments show that this method is efficient to deposit SiGe at low temperature.

Key words: SiGe, D-UHV/CVD, low-temperature deposition, DCXRD

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Received: 18 August 2015 Revised: 22 May 2008 Online: Published: 01 October 2008

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD.In conventional conditions,the lowest temperature for SiGe growth is about 550℃.Generally,the pressure of the growth chamber is about 1E-5Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas.We have succeeded in depositing SiGe films at much lower temperature using a novel method.It is about 1E-2Pa without liquid nitrogen,about 3 magnitudes higher than the traditional method,leading to much faster deposition rate.Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃.The DCXRD curves and TEM image show that the quality of the film is good.The experiments show that this method is efficient to deposit SiGe at low temperature.

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