Abstract: The kinetics process and control process of chemical mechanical high precision finishing for material surfaces were studied. According to the experiments, the seven kinetics process for chemical mechanical polishing (CMP)was generalized.Through investigating the CMP process of ULSI silicon substrate，we found that the chemical process was the CMP control process under the same mechanical action condition, which was determined by emperature. The key factor influencing the chemical reactions was effectively settled, which will be advantageous for ireproving the CMP removal rate for other materials.

Key words: chemical mechanical polishing, kinetics process, control process, silicon substrate, removal rate, polishing temperature