Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1501-1506
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用于制备SOI材料的基于硅片键合和双层多孔硅剥离的薄外延硅膜转移技术(英文)

竺士炀 , 李爱珍 and 黄宜平

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Key words: SOI, 多孔硅, 硅外延, 键合

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1501-1506
      竺士炀, 李爱珍, 黄宜平. 用于制备SOI材料的基于硅片键合和双层多孔硅剥离的薄外延硅膜转移技术(英文)[J]. 半导体学报(英文版), 2001, 22(12): 1501-1506.
      Citation:
      竺士炀, 李爱珍, 黄宜平. 用于制备SOI材料的基于硅片键合和双层多孔硅剥离的薄外延硅膜转移技术(英文)[J]. 半导体学报(英文版), 2001, 22(12): 1501-1506.
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      • Received Date: 2015-08-20

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