| Citation: |
Fu Shenghui, Zhong Yuan, Song Guofeng, Chen Lianghui. High-Power Distributed Feedback Laser Diodes Emitting at 820nm[J]. Journal of Semiconductors, 2006, 27(6): 966-969.
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Fu S H, Zhong Y, Song G F, Chen L H. High-Power Distributed Feedback Laser Diodes Emitting at 820nm[J]. Chin. J. Semicond., 2006, 27(6): 966.
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High-Power Distributed Feedback Laser Diodes Emitting at 820nm
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Abstract
By etching a second-order grating directly into the Al-free optical waveguide region of a ridge-waveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode.The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance.The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA. -
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