| Citation: |
Zhao Miao, Zhou Daibing, Tan Manqing, Wang Xiaodong, Wu Xuming. Preparation of Si/SiO2 Optical Thin Film by Double Source Electron Beam Evaporation Technology[J]. Journal of Semiconductors, 2006, 27(9): 1586-1589.
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Zhao M, Zhou D B, Tan M Q, Wang X D, Wu X M. Preparation of Si/SiO2 Optical Thin Film by Double Source Electron Beam Evaporation Technology[J]. Chin. J. Semicond., 2006, 27(9): 1586.
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Preparation of Si/SiO2 Optical Thin Film by Double Source Electron Beam Evaporation Technology
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Abstract
A technology for preparing optical thin films is introduced.A Si/SiO2 mixed thin film is evaporated onto K9 glass by double source electron beam evaporation.The results show that the reflectivity index of the mixed thin film changes with the proportion of the Si and SiO2 evaporation rate,and its value changes between that of Si and SiO2.The rules between the proportion of the evaporation rates and the reflectivity index is obtained through the experiment.The advantages of the technology are discussed. -
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