Chin. J. Semicond. > 1981, Volume 2 > Issue 3 > 234-239
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脉冲电子束退火装置及其对注砷硅的退火结果

伊藤纠次 , 饶德祥 , 田村英男 and 大久保靖

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(3): 234-239
      伊藤纠次, 饶德祥, 田村英男, 大久保靖. 脉冲电子束退火装置及其对注砷硅的退火结果[J]. 半导体学报(英文版), 1981, 2(3): 234-239.
      Citation:
      伊藤纠次, 饶德祥, 田村英男, 大久保靖. 脉冲电子束退火装置及其对注砷硅的退火结果[J]. 半导体学报(英文版), 1981, 2(3): 234-239.
      shu

      • Received Date: 2015-08-20

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