Chin. J. Semicond. > 1990, Volume 11 > Issue 5 > 348-354
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反应溅射氮化钨薄膜特性研究

张利春 , 高玉芝 , 宁宝俊 , 夏宗璜 and 赖初喜

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(5): 348-354
      张利春, 高玉芝, 宁宝俊, 夏宗璜, 赖初喜. 反应溅射氮化钨薄膜特性研究[J]. 半导体学报(英文版), 1990, 11(5): 348-354.
      Citation:
      张利春, 高玉芝, 宁宝俊, 夏宗璜, 赖初喜. 反应溅射氮化钨薄膜特性研究[J]. 半导体学报(英文版), 1990, 11(5): 348-354.
      shu

      • Received Date: 2015-08-19

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