| Citation: |
Xu Yong, Wang Zhigong, Guan Yu, Qiao Lufeng, Zhao Fei. Improved Design of a Bandgap Voltage Referencewith High Accuracy[J]. Journal of Semiconductors, 2006, 27(12): 2209-2213.
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Xu Y, Wang Z G, Guan Y, Qiao L F, Zhao F. Improved Design of a Bandgap Voltage Referencewith High Accuracy[J]. Chin. J. Semicond., 2006, 27(12): 2209.
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Improved Design of a Bandgap Voltage Referencewith High Accuracy
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Abstract
A bandgap voltage reference based on the conventional architecture is optimized.The effects of the MOS device mismatch and the channel-length modulation are decreased by optimizing the design of the current mirror and controllingUDS.Better precision and a lower temperature coefficient are obtained.The average value of the output voltage is 1.23±0.02V,with a standard deviation (σ) of only 0.007V,for 200 chips that were measured.The average measured temperature coefficient is 16ppm/℃ in the range of -40 to 85℃,and the average power supply current is 100μA.The designed and measured values are well matched in this optimized architecture. -
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