Chin. J. Semicond. > 1990, Volume 11 > Issue 12 > 954-957
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反应溅射法制备掺硼的a—Si:H(B)薄膜的ESR研究

陈光华 , 徐进章 and 张仿清

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(12): 954-957
      陈光华, 徐进章, 张仿清. 反应溅射法制备掺硼的a—Si:H(B)薄膜的ESR研究[J]. 半导体学报(英文版), 1990, 11(12): 954-957.
      Citation:
      陈光华, 徐进章, 张仿清. 反应溅射法制备掺硼的a—Si:H(B)薄膜的ESR研究[J]. 半导体学报(英文版), 1990, 11(12): 954-957.
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      • Received Date: 2015-08-19

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