Chin. J. Semicond. > 1997, Volume 18 > Issue 7 > 558-560

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半绝缘GaAs衬底中位错对MESFETs旁栅效应的影响

吴巨 , 何宏家 , 范缇文 , 王占国 and 张绵

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(7): 558-560
      吴巨, 何宏家, 范缇文, 王占国, 张绵. 半绝缘GaAs衬底中位错对MESFETs旁栅效应的影响[J]. 半导体学报(英文版), 1997, 18(7): 558-560.
      Citation:
      吴巨, 何宏家, 范缇文, 王占国, 张绵. 半绝缘GaAs衬底中位错对MESFETs旁栅效应的影响[J]. 半导体学报(英文版), 1997, 18(7): 558-560.
      shu

      • Received Date: 2015-08-19

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