Chin. J. Semicond. > 2000, Volume 21 > Issue 8 > 786-791
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电导调制型功率器件用穿通结构的基区优化理论

何进 , 张兴 , 黄如 , 杜彩霞 , 韩磊 and 王新

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Key words: 功率器件, 穿通结构, 电导调制, 优化设计

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(8): 786-791
      何进, 张兴, 黄如, 杜彩霞, 韩磊, 王新. 电导调制型功率器件用穿通结构的基区优化理论[J]. 半导体学报(英文版), 2000, 21(8): 786-791.
      Citation:
      何进, 张兴, 黄如, 杜彩霞, 韩磊, 王新. 电导调制型功率器件用穿通结构的基区优化理论[J]. 半导体学报(英文版), 2000, 21(8): 786-791.
      shu

      • Received Date: 2015-08-20

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