Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1398-1402
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射频功率晶体管的多晶硅二氧化硅夹心深槽场限制环新结构(英文)

齐臣杰 , 傅军 , 王军军 and 刘理天

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Key words: 击穿电压, 场限制环, 射频功率器件, 夹心槽

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1398-1402
      齐臣杰, 傅军, 王军军, 刘理天. 射频功率晶体管的多晶硅二氧化硅夹心深槽场限制环新结构(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1398-1402.
      Citation:
      齐臣杰, 傅军, 王军军, 刘理天. 射频功率晶体管的多晶硅二氧化硅夹心深槽场限制环新结构(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1398-1402.
      shu

      • Received Date: 2015-08-19

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