| Citation: |
Kong Ming, Guo Jianmin, Zhang Ke, Li Wenhong. A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs[J]. Journal of Semiconductors, 2007, 28(10): 1546-1550.
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Kong M, Guo J M, Zhang K, Li W H. A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs[J]. Chin. J. Semicond., 2007, 28(10): 1546.
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A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs
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Abstract
A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs.Its precision is improved by the cancellation of the process variation.The reference has been successfully implemented in a Chartered 0.35μm CMOS process.The occupied chip area is 0.022mm2.Measurements indicate that without trimming,the average output voltage error is 6mV at room temperature compared with the simulation result.The temperature coefficient is 180ppm/℃ in the worst case in the temperature range of 0 to 100℃,and the line regulation is ±1.1%.The reference is applied in an adaptive power MOSFET driver. -
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