Chin. J. Semicond. > 1990, Volume 11 > Issue 12 > 958-961
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低漏电高增益InGaAs/InP SAGM雪崩光电二极管

王树堂 , 曾靖 , 李锋 , 胡春阳 , 夏彩虹 , 孙捷 and 樊爱香

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    王树堂, 曾靖, 李锋, 胡春阳, 夏彩虹, 孙捷, 樊爱香. 低漏电高增益InGaAs/InP SAGM雪崩光电二极管[J]. 半导体学报(英文版), 1990, 11(12): 958-961.
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    Received: 19 August 2015 Revised: Online: Published: 01 December 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(12): 958-961
      王树堂, 曾靖, 李锋, 胡春阳, 夏彩虹, 孙捷, 樊爱香. 低漏电高增益InGaAs/InP SAGM雪崩光电二极管[J]. 半导体学报(英文版), 1990, 11(12): 958-961.
      Citation:
      王树堂, 曾靖, 李锋, 胡春阳, 夏彩虹, 孙捷, 樊爱香. 低漏电高增益InGaAs/InP SAGM雪崩光电二极管[J]. 半导体学报(英文版), 1990, 11(12): 958-961.
      shu

      • Received Date: 2015-08-19

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