Chin. J. Semicond. > 1983, Volume 4 > Issue 2 > 117-123
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石墨插层化合物能带计算的一种方法

叶令 and 张开明

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(2): 117-123
      叶令, 张开明. 石墨插层化合物能带计算的一种方法[J]. 半导体学报(英文版), 1983, 4(2): 117-123.
      Citation:
      叶令, 张开明. 石墨插层化合物能带计算的一种方法[J]. 半导体学报(英文版), 1983, 4(2): 117-123.
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      • Received Date: 2015-08-20

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