Chin. J. Semicond. > 1991, Volume 12 > Issue 10 > 637-640
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间接耦合光电探测结构的光致负阻特性

何民才 , 钟哲 , 陈炳若 , 黄启俊 , 陈畅生 , 龙理 , 杨恢东 and 蔡本兰

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(10): 637-640
      何民才, 钟哲, 陈炳若, 黄启俊, 陈畅生, 龙理, 杨恢东, 蔡本兰. 间接耦合光电探测结构的光致负阻特性[J]. 半导体学报(英文版), 1991, 12(10): 637-640.
      Citation:
      何民才, 钟哲, 陈炳若, 黄启俊, 陈畅生, 龙理, 杨恢东, 蔡本兰. 间接耦合光电探测结构的光致负阻特性[J]. 半导体学报(英文版), 1991, 12(10): 637-640.
      shu

      • Received Date: 2015-08-19

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