| Citation: |
Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji, Gao Yongliang. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. Journal of Semiconductors, 2008, 29(9): 1779-1782.
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Zhu R H, Zeng Y P, Bu J P, Hui F, Zheng H J, Zhao J, Gao Y L. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. J. Semicond., 2008, 29(9): 1779.
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Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal
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Abstract
Using the laser scattering method to measure a polished GaAs wafer,we find that there are four aggregation centers of arsenide precipitation in a GaAs crystal grown in a special thermal field［1］ and the aggregation centers are at precisely the positions where the dislocation density is at a minimum.In this article,we examine the correlation between the precipitation distribution of arsenide and the dislocations.We also explain what leads to the formation of the four arsenide precipitation aggregation centers and their special distribution. -
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