Chin. J. Semicond. > 1994, Volume 15 > Issue 2 > 130-135
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高开关比（Ion／Ioff）a－Si TFT

熊绍珍，孟志国，代永平，周祯华，张建军，莫希朝，李德林，赵庚申，徐温元

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    Received: 18 August 2015 Revised: Online: Published: 01 February 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(2): 130-135
      熊绍珍，孟志国，代永平，周祯华，张建军，莫希朝，李德林，赵庚申，徐温元. 高开关比（Ion／Ioff）a－Si TFT[J]. 半导体学报(英文版), 1994, 15(2): 130-135.
      Citation:
      熊绍珍，孟志国，代永平，周祯华，张建军，莫希朝，李德林，赵庚申，徐温元. 高开关比（Ion／Ioff）a－Si TFT[J]. 半导体学报(英文版), 1994, 15(2): 130-135.
      shu

      • Received Date: 2015-08-18

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