Chin. J. Semicond. > 2000, Volume 21 > Issue 8 > 765-769
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硼原子对Si(100)衬底上Ge量子点生长的影响

周星飞 , 施斌 , 蒋伟荣 , 胡冬枝 , 樊永良 , 龚大卫 , 张翔九 and 蒋最敏

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Key words: 量子点, Ge, 生长

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(8): 765-769
      周星飞, 施斌, 蒋伟荣, 胡冬枝, 樊永良, 龚大卫, 张翔九, 蒋最敏. 硼原子对Si(100)衬底上Ge量子点生长的影响[J]. 半导体学报(英文版), 2000, 21(8): 765-769.
      Citation:
      周星飞, 施斌, 蒋伟荣, 胡冬枝, 樊永良, 龚大卫, 张翔九, 蒋最敏. 硼原子对Si(100)衬底上Ge量子点生长的影响[J]. 半导体学报(英文版), 2000, 21(8): 765-769.
      shu

      • Received Date: 2015-08-20

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