| Citation: |
Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, Wu Xiaoli, Gong Haimei. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Journal of Semiconductors, 2007, 28(1): 122-126.
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Lü Y, Yue F Y, Hong X K, Chen J F, Han B, Wu X L, Gong H M. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Chin. J. Semicond., 2007, 28(1): 122.
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Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP
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Abstract
Surface damage on InGaAs,n-InP,and p-InP after Ar+ etching is studied,and it is removed by wet etching post treatments.After Ar+ etching,the root-mean-square roughness of InGaAs surface is lower,but the roughness of n-InP and p-InP surfaces is significantly higher.The photoluminescence (PL) intensity of Ar+-etched InGaAs increases,but those of Ar+-etched n-InP and p-InP decreases.X-ray photoelectron spectroscopy (XPS) is used to investigate the atomic concentration of three samples before Ar+ etching and after Ar+ etching and wet etching post treatments.After Ar+ etching,the content of In and Ga at the InGaAs surface increases markedly,and there is generally a preferential loss of P from n-InP and p-InP surfaces.The surface atomic concentration of the samples after wet etching is almost the same as before Ar+ etching.-
Keywords:
- Ar+ etching,
- InGaAs,
- InP,
- wet etching,
- surface damage
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References
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Proportional views
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