Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

Lü Yanqiu; Yue Fangyu; Hong Xuekun; Chen Jiangfeng; Han Bing; Wu Xiaoli; Gong Haimei

Chin. J. Semicond. > 2007, Volume 28 > Issue 1 > 122-126

PAPERS

Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, Wu Xiaoli and Gong Haimei

+ Author Affiliations

Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

Abstract: Surface damage on InGaAs,n-InP,and p-InP after Ar+ etching is studied,and it is removed by wet etching post treatments.After Ar+ etching,the root-mean-square roughness of InGaAs surface is lower,but the roughness of n-InP and p-InP surfaces is significantly higher.The photoluminescence (PL) intensity of Ar+-etched InGaAs increases,but those of Ar+-etched n-InP and p-InP decreases.X-ray photoelectron spectroscopy (XPS) is used to investigate the atomic concentration of three samples before Ar+ etching and after Ar+ etching and wet etching post treatments.After Ar+ etching,the content of In and Ga at the InGaAs surface increases markedly,and there is generally a preferential loss of P from n-InP and p-InP surfaces.The surface atomic concentration of the samples after wet etching is almost the same as before Ar+ etching.

Key words: Ar+ etching, InGaAs, InP, wet etching, surface damage

1	Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, et al. Journal of Semiconductors, 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006
2	Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, et al. Journal of Semiconductors, 2015, 36(7): 074009. doi: 10.1088/1674-4926/36/7/074009
3	Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, et al. Journal of Semiconductors, 2012, 33(5): 054007. doi: 10.1088/1674-4926/33/5/054007
4	S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT Z. Hamaizia, N. Sengouga, M. C. E. Yagoub, M. Missous Journal of Semiconductors, 2012, 33(2): 025001. doi: 10.1088/1674-4926/33/2/025001
5	High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin, et al. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004
6	Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface Wang Liancheng, Guo Enqing, Liu Zhiqiang, Yi Xiaoyan, Wang Guohong, et al. Journal of Semiconductors, 2011, 32(2): 024009. doi: 10.1088/1674-4926/32/2/024009
7	Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT Huang Jie, Guo Tianyi, Zhang Haiying, Xu Jingbo, Fu Xiaojun, et al. Journal of Semiconductors, 2010, 31(9): 094008. doi: 10.1088/1674-4926/31/9/094008
8	Ultra high-speed InP/InGaAs SHBTs with f_t and f_max of 185 GHz Zhou Lei, Jin Zhi, Su Yongbo, Wang Xiantai, Chang Hudong, et al. Journal of Semiconductors, 2010, 31(9): 094007. doi: 10.1088/1674-4926/31/9/094007
9	InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures Yu Jinyong, Liu Xinyu, Xia Yang Journal of Semiconductors, 2009, 30(11): 114001. doi: 10.1088/1674-4926/30/11/114001
10	A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, et al. Journal of Semiconductors, 2008, 29(10): 1898-1901.
11	Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, et al. Journal of Semiconductors, 2008, 29(3): 414-417.
12	Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p^＋-InP/n-InGaAs/n-InP Double Heterojunction Material Wu Xiaoli, Wang Nili, Zhang Kefeng, Tang Hengjing, Huang Yimin, et al. Chinese Journal of Semiconductors , 2007, 28(11): 1769-1772.
13	Fabrication of a High-Performance RTD on InP Substrate Qi Haitao, Feng Zhen, Li Yali, Zhang Xiongwen, Shang Yaohui, et al. Chinese Journal of Semiconductors , 2007, 28(12): 1945-1948.
14	Agilent HBT Model Parameters Extraction Procedure For InP HBT’ He Jia, Sun Lingling, Liu Jun Chinese Journal of Semiconductors , 2007, 28(S1): 443-447.
15	Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’ Li Xianjie, Zhao Yonglin, Cai Daomin, Zeng Qingming, Pu Yunzhang, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 520-524.
16	Growth and characterization of InP-based and phosphorous-involved materials for applications to HBTs by GSMBE were studied systematically. High quality 50ram InP-based HBT and 100mm InGaP/GaAs HBT epitaxial materials were obtained through optimizing the HBT structure design and the GSMBE growth condition. It is shown that the HBT devices and circuits with high performance can be achieved by using the epi-wafers grown by the GSMBE technology developed in this work. Qi Ming, Xu Anhuai, Ai Likun, Sun Hao, Zhu Fuying, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 182-185.
17	A New Method for InGaAs/InP Composite ChannelHEMTs Simulation Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, et al. Chinese Journal of Semiconductors , 2007, 28(11): 1706-1711.
18	InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge Yu Jinyong, Liu Xinyu, Su Shubing, Wang Runmei, Xu Anhuai, et al. Chinese Journal of Semiconductors , 2007, 28(2): 154-158.
19	Design and Process for Self-Aligned InP/InGaAs SHBT Structure Li Xianjie, Cai Daomin, Zhao Yonglin, Wang Quanshu, Zhou Zhou, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 136-139.
20	GaAsSb/InP HBT Growth on InP Substrates XU Xian-gang, LIU Zhe, CUI De-liang Chinese Journal of Semiconductors , 2002, 23(9): 962-965.

Search

GET CITATION

Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, Wu Xiaoli, Gong Haimei. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Journal of Semiconductors, 2007, 28(1): 122-126.

Lü Y, Yue F Y, Hong X K, Chen J F, Han B, Wu X L, Gong H M. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Chin. J. Semicond., 2007, 28(1): 122.

Export: BibTex EndNote

Article Metrics

Article views: 3569 Times PDF downloads: 1402 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 16 August 2006 Online: Published: 01 January 2007

Surface damage on InGaAs,n-InP,and p-InP after Ar+ etching is studied,and it is removed by wet etching post treatments.After Ar+ etching,the root-mean-square roughness of InGaAs surface is lower,but the roughness of n-InP and p-InP surfaces is significantly higher.The photoluminescence (PL) intensity of Ar+-etched InGaAs increases,but those of Ar+-etched n-InP and p-InP decreases.X-ray photoelectron spectroscopy (XPS) is used to investigate the atomic concentration of three samples before Ar+ etching and after Ar+ etching and wet etching post treatments.After Ar+ etching,the content of In and Ga at the InGaAs surface increases markedly,and there is generally a preferential loss of P from n-InP and p-InP surfaces.The surface atomic concentration of the samples after wet etching is almost the same as before Ar+ etching.

Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

Abstract

References

Proportional views

Catalog

Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content